BRM501D rev.d nov.-2015 data sheet http://www.fsbrec.com 1 / 7 sot-23 ?? n mos ??n - channel mosfet in a sot-23 plastic package. esd ??v gs(th) ?-1.8v esd improved capability, depletion mode(v gs(th) =-1.8v,type). ?? this device is suitable for load switch of high voltage. ? / equivalent circuit pin1 s pin 2 g pin 3 d ? / marking / descriptions / features ? / applications / pinning marking h501 3 1 2
BRM501D rev.d nov.-2015 data sheet http://www.fsbrec.com 2 / 7 parameter symbol ? rating unit drain-source voltage v ds 600 v drain current - continuous i d (t c =25 ) 30 ma drain current - continuous i d (t c =70 ) 24 ma drain current- pulsed i dm 120 ma continuous source current i s 25 ma maximum pulsed current i sm 100 ma gate-to-source voltage v gs 20 v gate source esd v esd 300 v power dissipation p d 0.5 w junction-to-ambient r ja 250 /w junction temperature range t j , 150 storage temperature range t stg -55 to 150 temperature for soldering t l 300 parameter symbol test conditions ? min ? typ ? max unit drain?source breakdown voltage bv dss v gs =-5.0v i d =250 a 600 v zero gate voltage drain current i dss v ds =25v v gs =0v 12 ma gate?body leakage. i gss v gs =20v v ds =0v 10 a of f -state drain to source current i d(off) v ds =600v v gs =5.0v 0.1 a gate threshold voltage v gs(th) v ds =3.0v i d =8.0 a -2.7 -1.8 -1.0 v static drain?source on?resistance r ds(on)(1) v gs =0v i d =3.0ma 400 700 ? r ds(on)(2) v gs =10v i d =16ma 500 800 ? forward transconductance g fs v ds =50v i d =0.01a 0.008 0.017 s drain-source diode forward v oltage v sd v gs =-5.0v i f =16ma 1.2 v input capacitance c iss v ds =25v v gs =-5.0v f=1.0mhz 50 pf output capacitance c oss 4.53 pf reverse transfer capacitance c rss 1.08 pf ? / absolute maximum ratings(ta=25 ) ? / electrical characteristics(ta=25 )
BRM501D rev.d nov.-2015 data sheet http://www.fsbrec.com 3 / 7 parameter symbol test conditions ? min ? typ ? max unit turn?on delay time t d(on) i d =0.01a v dd =300v r g =6.0 ? v gs =-5.0~7.0v 9.9 ns turn?on rise time t r 55.8 ns turn?off delay time t d(off) 56.4 ns turn?off fall time t f 136 ns total gate charge q g i d =0.01a v dd =400v v gs =-5vto5v 1.14 nc gate to source charge q gs 0.5 nc gate to drain (?miller?)charge q gd 0.37 nc reverse recovery time t rr i f =0.01a t j =25 v r =300v dif/dt=100a/us 243 ns reverse recovery charge q rr 636 nc ? / electrical characteristics(ta=25 )
BRM501D rev.d nov.-2015 data sheet http://www.fsbrec.com 4 / 7 ? / electrical characteristic curve pd ? tc id ? tc id ? vds id ? vgs ciss,coss,crss-v ds bvdss ? tj
BRM501D rev.d nov.-2015 data sheet http://www.fsbrec.com 5 / 7 ?? / package dimensions
BRM501D rev.d nov.-2015 data sheet http://www.fsbrec.com 6 / 7 ?? / marking instructions ? h: ?? 501 ??? note: h company code. 501: product type h501
BRM501D rev.d nov.-2015 data sheet http://www.fsbrec.com 7 / 7 ?? ( ? ) / temperature?profile?for?ir?reflow?soldering(pb-free) ? note: 1 ?? 25 150 ? 60 90sec; 1.preheating:25~150 , time:60~90sec. 2 ?? 245 5 ?? 5 0.5sec; 2.peak temp.:245 5 , duration:5 0.5sec. 3 ???? 2 10 /sec. 3. cooling speed: 2~10 /sec. ? / resistance to soldering heat test conditions ?? 260 5 ?? 10 1 sec. temp.:260 5 time:10 1 sec ? / packaging spec. ?? / reel package type ?? units ? dimension ?? (unit mm 3 ) units/reel ? / reels/inner box / units/inner box ? / inner boxes/outer box / units/outer box ? / reel inner box outer box sot-23 3,000 10 30,000 8 240,000 7 8 180120180 385257392 ?? / notices
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